INSTRUMENT MEASURING TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME WITHOUT CONTACT

被引:9
作者
OHSAWA, A
HONDA, K
TAKIZAWA, R
TOYOKURA, N
机构
关键词
D O I
10.1063/1.1137347
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:210 / 212
页数:3
相关论文
共 50 条
[31]   MINORITY-CARRIER LIFETIME OF ION GETTERED SILICON [J].
RYSSEL, H ;
SCHMIEDT, B ;
KRANZ, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :C360-C360
[32]   THE EFFECT OF QUENCHING ON THE MINORITY-CARRIER LIFETIME IN SILICON [J].
MILEVSKII, LS .
SOVIET PHYSICS-SOLID STATE, 1961, 2 (09) :1931-1933
[33]   CONTACTLESS MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON [J].
WHITE, JC ;
UNTER, TF ;
SMITH, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1217-1218
[34]   MINORITY-CARRIER LIFETIME IN ITO INP HETEROJUNCTIONS [J].
AHRENKIEL, RK ;
DUNLAVY, DJ ;
HANAK, T .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1916-1921
[35]   MEASUREMENT OF MINORITY-CARRIER LIFETIME PROFILES IN SILICON [J].
SCHWAB, G ;
BERNT, H ;
REICHL, H .
SOLID-STATE ELECTRONICS, 1977, 20 (02) :91-&
[36]   CATHODOLUMINESCENCE MEASUREMENTS OF MINORITY-CARRIER LIFETIME IN SEMICONDUCTORS [J].
BOULOU, M ;
BOIS, D .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4713-4721
[37]   MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE [J].
LOPES, VC ;
SYLLAIOS, AJ ;
CHEN, MC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :824-841
[38]   METHOD OF MINORITY-CARRIER LIFETIME DETERMINATION FOR A SEMICONDUCTOR [J].
KAUROV, VV ;
PANTELEEV, VA .
INDUSTRIAL LABORATORY, 1976, 42 (08) :1280-1282
[39]   MINORITY-CARRIER LIFETIME IN LASER RECRYSTALLIZED POLYSILICON [J].
SAKATA, I ;
HAYASHI, Y ;
ISHII, K ;
TAKAHASHI, T ;
YAMANAKA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L328-L330
[40]   DETERMINATION OF RECOMBINATION CENTER POSITION FROM THE TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN THE BASE REGION OF P-N-JUNCTION SOLAR-CELLS [J].
BHATTACHARYA, DK ;
MANSINGH, A ;
SWARUP, P .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2942-2947