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- [1] TEMPERATURE-DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURESJOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4808 - 4810BERGMAN, JPHALLIN, CJANZEN, E
- [2] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VAPOR-GROWN GAPJOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2143 - 2146WESSELS, BW
- [3] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN LOW-RESISTIVITY GAASJOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2775 - 2776KLADIS, DIEUTHYMIOU, PC
- [4] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VPE GAP-N, TEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : K205 - K208WOGGON, UWANDEL, KWEINERT, H
- [5] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN SINGLE-CRYSTAL AND POLYCRYSTALLINE SI SOLAR-CELLSJOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3651 - 3654MATHUR, PCSHARMA, RPSAXENA, PARORA, JD
- [6] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIMES IN CZOCHRALSKI SILICON-CRYSTALSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C329OHSAWA, AHONDA, KTAKIZAWA, RTOYOKURA, N
- [7] A NEW STATIC METHOD FOR MEASURING MINORITY-CARRIER LIFETIMEJOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5158 - 5160MANIFACIER, JCMOREAU, YHENISCH, HK
- [8] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN IRON-DIFFUSED P-TYPE SILICON-WAFERSJOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3077 - 3081HAYAMIZU, YHAMAGUCHI, TUSHIO, SABE, TSHIMURA, F
- [10] A FAST EXTRAPOLATION TECHNIQUE FOR MEASURING MINORITY-CARRIER GENERATION LIFETIMESOLID-STATE ELECTRONICS, 1985, 28 (04) : 403 - 406YUE, CSVYAS, HHOLT, MBOROWICK, J