BALLISTIC ELECTRONS IN COMPOUND SEMICONDUCTORS

被引：1

作者：

EASTMAN, LF

机构：

[1] CORNELL UNIV,JOINT SERV ELECTR PROGRAM,ITHACA,NY 14853

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE SPECTRUM | 1986年 / 23卷 / 02期

关键词：

CRYSTALS - ELECTRONS - Transport Properties - SEMICONDUCTING GALLIUM ARSENIDE - TRANSISTORS - Design - TRANSISTORS; FIELD EFFECT;

D O I：

10.1109/MSPEC.1986.6370999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is pointed out that shorter transit times in transistors can be obtained by only two techniques: constructing a device with a shorter active length, and accelerating the electrons to a higher velocity with a ballistic launcher. The work that has been done on these two techniques is surveyed. Various devices incorporating ballistic injection are described.

引用

页码：42 / 45

页数：4