REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES

被引：98

作者：

RICHARD, PD ^{[1
]}

MARKUNAS, RJ ^{[1
]}

LUCOVSKY, G ^{[1
]}

FOUNTAIN, GG ^{[1
]}

MANSOUR, AN ^{[1
]}

TSU, DV ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573334

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：867 / 872

页数：6

共 18 条

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[7] OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].

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PHYSICAL REVIEW B, 1983, 28 (06) :3225-3233

[8] NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS [J].

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CZUBATYJ, W .

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[9]

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