INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE

被引：16
作者：
KIM, SJ
GUTH, G
VELLACOLEIRO, GP
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期
关键词：
D O I：
10.1109/55.725
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：306 / 308
页数：3
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