EFFECT OF REABSORBED RECOMBINATION RADIATION ON THE DIFFUSION LENGTH OF MINORITY-CARRIERS IN WIDE-BAND-GAP SEMICONDUCTORS

被引：11

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作者：

VONROOS, O

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来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

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D O I：

10.1063/1.332367

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O59 [应用物理学];

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页码：2495 / 2498

页数：4

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