NORMALLY-OFF INGAAS JUNCTION FIELD-EFFECT TRANSISTOR WITH INGAAS BUFFER LAYER

被引：7

作者：

ALBRECHT, H

LAUTERBACH, C

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 08期

关键词：

D O I：

10.1109/EDL.1987.26657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：353 / 354

页数：2

共 6 条

[1] 2-MU-M GATE-LENGTH ENHANCEMENT MODE INGAAS/INP - FE-JFETS WITH HIGH TRANSCONDUCTANCE [J].

ALBRECHT, H ;

BITTNAR, J ;

LAUTERBACH, C .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :66-68

[2] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J].

CHENG, J ;

FORREST, SR ;

STALL, R ;

GUTH, G ;

WUNDER, R .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :885-887

[3]

HASEGAWA F, 1982, GAAS PRINCIPLES TECH, P177

[4] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER [J].

WAKE, D ;

SCOTT, EG ;

HENNING, ID .

ELECTRONICS LETTERS, 1986, 22 (13) :719-721

[5] INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE MADE USING METAL ORGANIC VAPOR-PHASE EPITAXY [J].

WAKE, D ;

NELSON, AW ;

COLE, S ;

WONG, S ;

HENNING, ID ;

SCOTT, EG .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :626-627

[6]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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