DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON

被引：114
作者：
BROWER, KL
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.26.6040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：6040 / 6052
页数：13
相关论文
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