ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE

被引：80

作者：

ISHIKAWA, T

SAITO, J

SASA, S

HIYAMIZU, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L675 / L676

页数：2

共 9 条

[1] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[3]

KANEKO K, 1977, INT PHYS C SER A, V33, P216

[4] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[5] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

CHO, AY ;

RADICE, C .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4882-4884

[6] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].

SPRINGTHORPE, AJ ;

KING, FD ;

BECKE, A .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118

[7] AN EXPLANATION FOR ANOMALOUS DONOR ACTIVATION-ENERGIES IN AL0.35GA0.65AS [J].

THORNE, RE ;

DRUMMOND, TJ ;

LYONS, WG ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :189-191

[8] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

[9] DONOR ENERGY-LEVEL FOR SE IN GA1-XALXAS [J].

YANG, JJ ;

MOUDY, LA ;

SIMPSON, WI .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :244-246

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