IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI

被引：32

作者：

KUNZER, M ^{[1
]}

JOST, W ^{[1
]}

KAUFMANN, U ^{[1
]}

HOBGOOD, HM ^{[1
]}

THOMAS, RN ^{[1
]}

机构：

[1] WESTINGHOUSE SCI & TECHNOL CTR,PITTSBURGH,PA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.48.4437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been discovered. They are shown to arise from the singly ionized Bi(Ga) double donor. Most remarkably, a substantial fraction, about 10%, of the total Bi content is found to occupy the Ga site. The Bi(Ga) MCD absorption band is tentatively assigned to an exciton deeply bound to the singly ionized double donor Bi(Ga)+.

引用

页码：4437 / 4441

页数：5

共 27 条

[1] MAGNETIC CIRCULAR-DICHROISM INVESTIGATIONS OF FE-3+ IONS IN INP CRYSTALS [J].