CHAOTIC STEP BUNCHING DURING CRYSTAL-GROWTH

被引：8
作者：
KANDEL, D
WEEKS, JD
机构：
[1] Institute for Physical Science and Technology, University of Maryland, College Park
来源：
PHYSICA D | 1993年 / 66卷 / 1-2期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0167-2789(93)90226-Q
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We study a simple model for step bunching during crystal growth by propagating a disturbance into an unstable system of equidistant steps. The system exhibits a wide range of different bunching modes as a function of the initial step spacing, leading to distinctive spatial patterns: periodic (with subharmonic bifurcations), chaotic and intermittent. Linear and nonlinear marginal stability theory gives extremely accurate predictions of the velocity of the propagating front. One of the bifurcations is identified as a transition from a regime where linear marginal stability applies to a nonlinear marginal stability regime. The location of this bifurcation is determined accurately.
引用
收藏
页码：78 / 86
页数：9
相关论文
共 25 条
[11]  
HAO BL, 1984, CHAOS
[12]   STEP BUNCHING AS A CHAOTIC PATTERN-FORMATION PROCESS [J].
KANDEL, D ;
WEEKS, JD .
PHYSICAL REVIEW LETTERS, 1992, 69 (26) :3758-3761
[13]   TRANSFORMATIONS ON CLEAN SI(111) STEPPED SURFACE DURING SUBLIMATION [J].
LATYSHEV, AV ;
ASEEV, AL ;
KRASILNIKOV, AB ;
STENIN, SI .
SURFACE SCIENCE, 1989, 213 (01) :157-169
[14]   STEP MOTION ON CRYSTAL SURFACES [J].
SCHWOEBEL, RL ;
SHIPSEY, EJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3682-+
[15]   STEP MOTION ON CRYSTAL SURFACES .2. [J].
SCHWOEBEL, RL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :614-+
[16]   ELECTROMIGRATION INDUCED STEP BUNCHING ON SI SURFACES - HOW DOES IT DEPEND ON THE TEMPERATURE AND HEATING CURRENT DIRECTION [J].
STOYANOV, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (01) :1-6
[17]   SPONTANEOUS GROWTH OF COHERENT TILTED SUPERLATTICE ON VICINAL (100) GAAS SUBSTRATES [J].
TSUCHIYA, M ;
PETROFF, PM ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1989, 54 (17) :1690-1692
[18]   AI0.3GA0.7AS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES [J].
TSUI, RK ;
KRAMER, GD ;
CURLESS, JA ;
PEFFLEY, MS .
APPLIED PHYSICS LETTERS, 1986, 48 (14) :940-942
[19]   EFFECTS OF SUBSTRATE MISORIENTATION ON THE PROPERTIES OF (AL, GA)AS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSUI, RK ;
CURLESS, JA ;
KRAMER, GD ;
PEFFLEY, MS ;
RODE, DL .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2570-2572
[20]  
VANDEREERDEN JP, 1986, PHYS REV LETT, V57, P2431, DOI 10.1103/PhysRevLett.57.2431
123