HIGH-POWER MODE-LOCKED COMPOUND LASER USING A TAPERED SEMICONDUCTOR AMPLIFIER

被引：31
|
作者：
GOLDBERG, L [1 ]
MEHUYS, D [1 ]
WELCH, D [1 ]
机构：
[1] SDL INC,SAN JOSE,CA 95134
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期
关键词：
D O I：
10.1109/68.324671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of a high power mode-locked laser, based on a tapered stripe traveling wave semiconductor amplifier and an additional separate narrow stripe gain element is described. Active mode-locking, achieved by RF modulation of the narrow stripe, resulted in pulses as short as 12 ps. Separately, maximum peak powers of 16 W and pulse energies above 0.5 nJ were observed.
引用
收藏
页码：1070 / 1072
页数：3
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