HIGH-POWER MODE-LOCKED COMPOUND LASER USING A TAPERED SEMICONDUCTOR AMPLIFIER

被引：31

作者：

GOLDBERG, L ^{[1
]}

MEHUYS, D ^{[1
]}

WELCH, D ^{[1
]}

机构：

[1] SDL INC,SAN JOSE,CA 95134

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期

关键词：

D O I：

10.1109/68.324671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of a high power mode-locked laser, based on a tapered stripe traveling wave semiconductor amplifier and an additional separate narrow stripe gain element is described. Active mode-locking, achieved by RF modulation of the narrow stripe, resulted in pulses as short as 12 ps. Separately, maximum peak powers of 16 W and pulse energies above 0.5 nJ were observed.

引用

收藏

页码：1070 / 1072

页数：3

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