HIGH-POWER MODE-LOCKED COMPOUND LASER USING A TAPERED SEMICONDUCTOR AMPLIFIER

被引：31
|
作者：
GOLDBERG, L [1 ]
MEHUYS, D [1 ]
WELCH, D [1 ]
机构：
[1] SDL INC,SAN JOSE,CA 95134
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 09期
关键词：
D O I：
10.1109/68.324671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of a high power mode-locked laser, based on a tapered stripe traveling wave semiconductor amplifier and an additional separate narrow stripe gain element is described. Active mode-locking, achieved by RF modulation of the narrow stripe, resulted in pulses as short as 12 ps. Separately, maximum peak powers of 16 W and pulse energies above 0.5 nJ were observed.
引用
收藏
页码：1070 / 1072
页数：3
相关论文
共 50 条
  • [1] High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability
    Schmitt-Sody, Andreas
    Velten, Andreas
    Liu, Ye
    Arissian, Ladan
    Diels, Jean-Claude
    INTERNATIONAL JOURNAL OF OPTICS, 2008, 2008
  • [2] BLUE-LIGHT GENERATION USING A HIGH-POWER TAPERED AMPLIFIER MODE-LOCKED LASER
    GOLDBERG, L
    MEHUYS, D
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 522 - 524
  • [3] High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier
    Akbar, Jehan
    Hou, Lianping
    Haji, Mohsin
    Strain, Michael J.
    Marsh, John H.
    Bryce, A. Catrina
    Kelly, Anthony E.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (03) : 253 - 256
  • [4] Tunable semiconductor hybrid mode-locked laser using a tapered amplifier as gain medium
    Velten, A.
    Schmitt-Sody, A.
    Liu, Y.
    Arissian, L.
    Diels, J. -C.
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 1143 - 1144
  • [5] High-power passively mode-locked semiconductor lasers
    Häring, R
    Paschotta, R
    Aschwanden, A
    Gini, E
    Morier-Genoud, F
    Keller, U
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) : 1268 - 1275
  • [6] High-power mode-locked semiconductor lasers using flared waveguides
    Sandia Natl Lab, Albuquerque, United States
    Appl Phys Lett, 26 (3558-3560):
  • [7] HIGH-POWER ERBIUM-DOPED FIBER LASER MODE-LOCKED BY A SEMICONDUCTOR SATURABLE ABSORBER
    BARNETT, BC
    RAHMAN, L
    ISLAM, MN
    CHEN, YC
    BHATTACHARYA, P
    RIHA, W
    REDDY, KV
    HOWE, AT
    STAIR, KA
    IWAMURA, H
    FRIBERG, SR
    MUKAI, T
    OPTICS LETTERS, 1995, 20 (05) : 471 - 473
  • [8] High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser
    Kisel, V. E.
    Rudenkov, A. S.
    Pavlyuk, A. A.
    Kovalyov, A. A.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Rubtsova, N. N.
    Semyagin, B. R.
    Kuleshov, N. V.
    OPTICS LETTERS, 2015, 40 (12) : 2707 - 2710
  • [9] High-power mode-locked external cavity semiconductor laser using inverse bow-tie semiconductor optical amplifiers
    Gee, S
    Alphonse, G
    Connolly, J
    Delfyett, PJ
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (02) : 209 - 215
  • [10] Monolithic Mode-Locked Laser With an Integrated Optical Amplifier for Low-Noise and High-Power Operation
    Hou, Lianping
    Haji, Mohsin
    Marsh, John H.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
12345