GROWTH AND CHARACTERIZATION OF C-N THIN-FILMS

被引:146
|
作者
CHEN, MY
LIN, X
DRAVID, VP
CHUNG, YW
WONG, MS
SPROUL, WD
机构
[1] NORTHWESTERN UNIV,MCCORMICK SCH ENGN & APPL SCI,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
[2] NORTHWESTERN UNIV,BASIC IND RES LAB,EVANSTON,IL 60201
[3] NORTHWESTERN UNIV,MCCORMICK SCH ENGN & APPL SCI,CTR ENGN TRIBOL,EVANSTON,IL 60208
来源
SURFACE & COATINGS TECHNOLOGY | 1992年 / 55卷 / 1-3期
关键词
D O I
10.1016/S0257-8972(07)80048-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Our preliminary studies showed that carbon nitride in amorphous and crystalline forms can be synthesized using reactive magnetron sputtering with substrates held at ambient temperatures. The films were evaluated by a wide range of diagnostic techniques (Auger spectroscopy, IR spectroscopy, scanning electron microscopy, energy-dispersive X-ray analysis, atomic force microscopy, transmission electron microscopy and tribo-testing). The most important finding is that we can deposit smooth, continuous C-N films on a variety of substrates. Unlike previous work, we were able to incorporate significant amounts of nitrogen into these films (N:C ratio exceeding 0.4 in the bulk). More importantly, IR studies show that nitrogen exists not merely as gaseous species but is chemically bonded to carbon in the film. Transmission electron microscopy studies showed clearly the coexistence of amorphous and crystalline C-N phases. When deposited on polycrystalline zirconium substrates, these films appear to be very adherent and wear resistant under lubricated sliding conditions. In dry sliding against 52100 steels, carbon nitride gives friction coefficients as low as 0.16, comparable with that of diamond.
引用
收藏
页码:360 / 364
页数:5
相关论文
共 50 条
  • [1] DEPOSITION BY REACTIVE ION-PLASMA SPUTTERING AND CHARACTERIZATION OF C-N THIN-FILMS
    NOVIKOV, NV
    VORONKIN, MA
    SMEKHNOV, AA
    ZAIKA, NI
    ZAKHARCHUK, AP
    DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 390 - 393
  • [2] GROWTH AND STRUCTURE OF C-N THIN-FILMS PREPARED BY RADIO-FREQUENCY REACTIVE SPUTTERING
    KUMAR, S
    TANSLEY, TL
    SOLID STATE COMMUNICATIONS, 1993, 88 (10) : 803 - 806
  • [3] FORMATION OF C-N THIN-FILMS BY ION-BEAM DEPOSITION
    BOYD, KJ
    MARTON, D
    TODOROV, SS
    ALBAYATI, AH
    KULIK, J
    ZUHR, RA
    RABALAIS, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (04): : 2110 - 2122
  • [4] Characterization of C-N Thin Films Prepared by Ion Beam Sputtering
    Yongjun TIAN
    Xuejun REN
    Dongli YU
    Julong HE
    Shizhen CHEN and Dongchun LI(Dept. of Materials Science and Engineering
    JournalofMaterialsScience&Technology, 1996, (04) : 312 - 314
  • [5] Characterization of C-N thin films prepared by ion beam sputtering
    Tian, YJ
    Ren, XJ
    Yu, DL
    He, JL
    Chen, SZ
    Li, DC
    Yu, RC
    Zhang, M
    Wang, WK
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 1996, 12 (04) : 312 - 314
  • [6] PLASMA GROWTH AND CHARACTERIZATION OF THIN-FILMS
    CHANG, CC
    CHANG, RPH
    THIN SOLID FILMS, 1981, 84 (04) : 368 - 368
  • [7] GROWTH AND CHARACTERIZATION OF DIAMOND THIN-FILMS
    NEMANICH, RJ
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1991, 21 : 535 - 558
  • [8] EPITAXIAL THIN-FILMS OF C-70 - GROWTH AND STRUCTURE CHARACTERIZATION
    ZHAO, WB
    ZHANG, XD
    YE, ZY
    ZHANG, JL
    LI, CY
    YIN, DL
    GU, ZN
    ZHOU, XH
    JIN, ZX
    SOLID STATE COMMUNICATIONS, 1993, 85 (04) : 311 - 315
  • [9] STRUCTURE AND BONDING STUDIES OF THE C-N THIN-FILMS PRODUCED BY RF-SPUTTERING METHOD
    TORNG, CJ
    SIVERTSEN, JM
    JUDY, JH
    CHANG, C
    JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) : 2490 - 2496
  • [10] GROWTH AND CHARACTERIZATION OF INDIUM TELLURIDE THIN-FILMS
    ROUSINA, R
    SHIVAKUMAR, GK
    THIN SOLID FILMS, 1988, 157 (02) : 345 - 350