HIGH-PHOTOSENSITIVITY A-SIGEH FILMS PREPARED BY RF GLOW-DISCHARGE PLASMA CVD METHOD

被引：5

作者：

ZHANG, FQ ^{[1
]}

SONG, ZZ ^{[1
]}

GUO, YP ^{[1
]}

CHEN, GH ^{[1
]}

机构：

[1] LANZHOU UNIV,DEPT PHYS,LANZHOU 730001,PEOPLES R CHINA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1993年 / 29卷 / 03期

关键词：

D O I：

10.1016/0927-0248(93)90034-Z

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Highly photosensitive and narrow band gap a-SiGe:H films have been prepared by the RF glow discharge plasma CVD method. The photosensitivity was 2.01 X 10(5) for the film with an optical band gap of E(g) = 1.47 eV. H-2 dilution and a relatively high RF power are attributed to the improving of the optoelectrical properties. Thermally induced changes of the a-SiGe:H films have been also investigated.

引用

页码：195 / 200

页数：6

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