HIGH-PHOTOSENSITIVITY A-SIGEH FILMS PREPARED BY RF GLOW-DISCHARGE PLASMA CVD METHOD

被引：5
|
作者：
ZHANG, FQ [1 ]
SONG, ZZ [1 ]
GUO, YP [1 ]
CHEN, GH [1 ]
机构：
[1] LANZHOU UNIV,DEPT PHYS,LANZHOU 730001,PEOPLES R CHINA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1993年 / 29卷 / 03期
关键词：
D O I：
10.1016/0927-0248(93)90034-Z
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Highly photosensitive and narrow band gap a-SiGe:H films have been prepared by the RF glow discharge plasma CVD method. The photosensitivity was 2.01 X 10(5) for the film with an optical band gap of E(g) = 1.47 eV. H-2 dilution and a relatively high RF power are attributed to the improving of the optoelectrical properties. Thermally induced changes of the a-SiGe:H films have been also investigated.
引用
收藏
页码：195 / 200
页数：6
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