INTERFACE STATES DISTRIBUTION AND DEEP LEVELS AT POLYCRYSTALLINE SILICON GRAIN-BOUNDARIES - EFFECTS OF THERMAL ANNEALINGS

被引：1

作者：

MGAFAD, N ^{[1
]}

AMZIL, H ^{[1
]}

PASQUENELLI, M ^{[1
]}

机构：

[1] FAC SCI & TECH ST JEROME,PHOTOELECT LAB,F-13397 MARSEILLE 13,FRANCE

来源：

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1991年 / 88卷 / 10期

关键词：

D O I：

10.1051/jcp/1991882211

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

By means of I-V characteristics deconvolution method, we have determined the potential barrier height E(B)-degrees and the distribution of interface states N(E) in the bandgap at polycrystalline silicon grain boundaries (G.B.'s). We have shown that N(E) is not uniform and thermal annealings, processed in argon atmosphere at more than 500-degrees-C, involve an increase in E-degrees and N(E) and shift the distribution center towards the midgap. This evolution is confirmed by DLTS analysis which have been carried out on the same grain boundaries.

引用

页码：2211 / 2216

页数：6

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