INJECTION LOCKING OF A HIGHLY COHERENT AND HIGH-POWER DIODE-LASER AT 1.5 MU-M

被引:10
|
作者
NAKAGAWA, K
TESHIMA, M
OHTSU, M
机构
[1] Graduate School at Nagatuta, Tokyo Institute of Technology, Midori-ku, Yokohama, 227, 4259, Nagatsuta-cho
[2] NTT Transmission System Laboratories, Yokosuka, 238-03, 1-2356, Take
关键词
D O I
10.1364/OL.16.001590
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Injection locking has been employed to improve the coherence of a high-power diode laser at 1.5-mu-m. The injected high-power laser emitted in a single mode with a side-mode suppression ratio of larger than 30 dB and an output power of 40 mW. The FM noise of the slave laser was nearly the same as that of the submegahertz-linewidth master laser. We have also demonstrated the coherent addition of the master and the injection-locked slave laser with a residual phase error of delta-phi < 0.2 rad.
引用
收藏
页码:1590 / 1592
页数:3
相关论文
共 50 条
  • [41] DIODE-LASER STRUCTURES FOR HIGH-POWER SINGLE-MODE OPERATION
    CHAN, AK
    TAYLOR, HF
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1986, 3 (13): : P81 - P81
  • [42] CALIBRATION OF ABSORPTION-SPECTRA AT 14-15 MU-M OBTAINED WITH A TUNABLE DIODE-LASER
    KNOLL, JS
    TETTEMER, GL
    PLANET, WG
    RAO, KN
    CHEN, DW
    PUGH, LA
    APPLIED OPTICS, 1976, 15 (12): : 2973 - 2974
  • [43] 1.52 MU-M PSK HETERODYNE EXPERIMENT FEATURING AN EXTERNAL CAVITY DIODE-LASER LOCAL OSCILLATOR
    WYATT, R
    HODGKINSON, TG
    SMITH, DW
    ELECTRONICS LETTERS, 1983, 19 (14) : 550 - 552
  • [44] DIODE-LASER SPECTRUM OF CARBON-DISULFIDE CS2 IN THE REGION OF 13.6 MU-M
    WALRAND, J
    MAREE, P
    BLANQUET, G
    JOURNAL OF MOLECULAR SPECTROSCOPY, 1992, 155 (01) : 158 - 166
  • [45] DIODE-LASER ABSORPTION OF UF6 AT ROOM-TEMPERATURE AROUND 16 MU-M
    BALDACCHINI, G
    FANTONI, R
    MARCHETTI, S
    MONTELATICI, V
    GIARDINIGUIDONI, A
    MORALES, P
    CATONI, F
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1986, 8 (02): : 203 - 210
  • [46] DIODE-LASER SPECTROSCOPY OF H-2 S-32 AROUND 0.82 MU-M
    FLAUD, JM
    GROSSKLOSS, R
    RAI, SB
    STUBER, R
    DEMTRODER, W
    TATE, DA
    WANG, LG
    GALLAGHER, TF
    JOURNAL OF MOLECULAR SPECTROSCOPY, 1995, 172 (01) : 275 - 281
  • [47] High-power operation of InGaAsP-InP laser diode array at 1.73 mu m
    Skidmore, JA
    Freitas, BL
    Reinhardt, CE
    Utterback, EJ
    Page, RH
    Emanuel, MA
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (10) : 1334 - 1336
  • [48] DIODE-LASER MEASUREMENTS OF CO2 LINE-INTENSITIES AT HIGH-TEMPERATURE IN THE 4.3 MU-M REGION
    ROSENMANN, L
    LANGLOIS, S
    DELAYE, C
    TAINE, J
    JOURNAL OF MOLECULAR SPECTROSCOPY, 1991, 149 (01) : 167 - 184
  • [49] HIGH-POWER SINGLE-FREQUENCY LASER AT 1.32 MU-M USING ND-YAG
    COTTER, D
    OPTICS COMMUNICATIONS, 1982, 43 (03) : 200 - 202
  • [50] BROAD-BAND, PASSIVE ISOLATOR FOR HIGH-POWER 10 MU-M WAVELENGTH LASER SYSTEMS
    PHIPPS, CR
    THOMAS, SJ
    FIGUEIRA, JF
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (04) : 383 - 383