EPITAXIAL-GROWTH OF TIO2 RUTILE THIN-FILMS ON SAPPHIRE SUBSTRATES BY A REACTIVE IONIZED CLUSTER BEAM METHOD

被引：28
|
作者：
FUKUSHIMA, K [1 ]
TAKAOKA, GH [1 ]
YAMADA, I [1 ]
机构：
[1] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,SAKYO KU,KYOTO 606,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 08期
关键词：
HETEROEPITAXY; REACTIVE IONIZED CLUSTER BEAM (RICB); TIO2; RUTILE; ALPHA-AL2O3; LATTICE MISFIT;
D O I：
10.1143/JJAP.32.3561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TiO2 thin films were grown on sapphire substrates at 500-degrees-C by means of reactive ionized cluster beam (RICB) deposition. The TiO2 thin films grown on sapphire (0001) and (1120BAR) substrates were single-crystalline and had the rutile structure. The epitaxial orientation relationships between the rutile films and the sapphire substrates were found to be (1) rutile (200)//Al2O3(0001) and (2) rutile (101)//Al2O3(1120BAR). On (1102BAR) sapphire substrates, the films showed both the anatase (101) and rutile (101) structures. The concept of near-coincidence lattice sites was applied to show that the lattice misfit at the interface between these rutile and sapphire planes was small (less than a few percent).
引用
收藏
页码：3561 / 3565
页数：5
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