EPITAXIAL-GROWTH OF TIO2 RUTILE THIN-FILMS ON SAPPHIRE SUBSTRATES BY A REACTIVE IONIZED CLUSTER BEAM METHOD

被引：28

作者：

FUKUSHIMA, K ^{[1
]}

TAKAOKA, GH ^{[1
]}

YAMADA, I ^{[1
]}

机构：

[1] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 08期

关键词：

HETEROEPITAXY; REACTIVE IONIZED CLUSTER BEAM (RICB); TIO2; RUTILE; ALPHA-AL2O3; LATTICE MISFIT;

D O I：

10.1143/JJAP.32.3561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2 thin films were grown on sapphire substrates at 500-degrees-C by means of reactive ionized cluster beam (RICB) deposition. The TiO2 thin films grown on sapphire (0001) and (1120BAR) substrates were single-crystalline and had the rutile structure. The epitaxial orientation relationships between the rutile films and the sapphire substrates were found to be (1) rutile (200)//Al2O3(0001) and (2) rutile (101)//Al2O3(1120BAR). On (1102BAR) sapphire substrates, the films showed both the anatase (101) and rutile (101) structures. The concept of near-coincidence lattice sites was applied to show that the lattice misfit at the interface between these rutile and sapphire planes was small (less than a few percent).

引用

页码：3561 / 3565

页数：5

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