EXTREMELY UNIFORM GROWTH ON 3-INCH DIAMETER INP SUBSTRATES BY OMVPE FOR N-ALINAS/GAINAS HEMT APPLICATION

Highly uniform GaInAs, AlInAs and GaInAs/InP MQW structures with excellent electrical and optical qualities were grown on 3-inch diameter InP substrates by low pressure OMVPE. The undoped GaInAs layer showed an electron mobility of 12,000 cm2/Vs with a carrier density of 7 X 10(14) cm-3 at room temperature. The variation of lattice mismatch across 3-inch diameter substrates was less than +/- 3 X 10(-5) both for GaInAs and AlInAs layers. An excellent thickness uniformity with a fluctuation within +/- 1% was obtained for the GaInAs/InP MQW structure. The doping uniformity of Si-doped AlInAs was +/- 5%. Si-doped AlInAs/GaInAs HEMTs grown on a 3-inch diameter InP substrate showed the uniform threshold voltage with a standard deviation of 5%.