SIMULATION OF REDISTRIBUTION OF DONOR IMPURITY IN SILICON DURING RAPID THERMAL ANNEALING WITH REGARD FOR PERCOLATION EFFECT

被引：2
作者：
BURENKOV, AF
KOMAROV, FF
FEDOTOV, SA
机构：
[1] Institute of Applied Physics Problems, Minsk
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 115卷 / 1-3期
关键词：
REDISTRIBUTION; SILICON; ANNEALING; PERCOLATION EFFECT; DONOR IMPURITY; SIMULATION; DIFFUSION;
D O I：
10.1080/10420159008220552
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A model for the impurity redistribution in heavily doped silicon layers suggested by Mathiot and Pfister6is modified. Two channels of impurity diffusion are taken into account: a redistribution of impurity inside of a percolation cluster and a standard diffusion outside of that cluster. The parameters of the model are identified for the case of rapid thermal annealing of antimony in silicon. The modified model better describes the observed diffusivity dependences on temperature and doping level. © 1990, Taylor & Francis Group, LLC. All rights reserved.
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页码：45 / 48
页数：4
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