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- [3] MODEL OF RECOMBINATION OF MINORITY-CARRIERS IN N-TYPE GERMANIUM IRRADIATED WITH 660 MEV PROTONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (09): : 1032 - 1034
- [4] PROBLEM OF DETERMINATION OF THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE GASB-S SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 453 - 454
- [5] INFLUENCE OF ANNEALING ON THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS IN N-TYPE SIC(6H) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 959 - 960
- [9] LIFETIME OF THE MINORITY-CARRIERS IN P-TYPE EPITAXIAL CDXHG1-XTE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (10): : 1026 - 1027
- [10] DETERMINATION OF DIFFUSION LENGTH OF MINORITY CARRIERS IN ELECTRON-BEAM-EXCITED N-TYPE GAAS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (01): : 249 - +