A THEORETICAL-STUDY OF THE EPITAXIAL-GROWTH OF METAL OVERLAYERS ON SEMICONDUCTOR SURFACES

被引：9
作者：
BATRA, IP [1 ]
CIRACI, S [1 ]
机构：
[1] MIDDLE E TECH UNIV,DEPT PHYS,ANKARA,TURKEY
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词：
D O I：
10.1116/1.582889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：427 / 432
页数：6
相关论文
共 67 条
[1]  
[Anonymous], SINGLE CRYSTAL FILMS
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]  
BAGLIN JEE, 1984, THIN FILMS INTERFACE, V2
[4]   BONDING AND STRUCTURE OF EPITAXIAL BICRYSTALS .2. THIN FILMS [J].
BALL, CAB .
PHYSICA STATUS SOLIDI, 1970, 42 (01) :357-&
[5]   IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1984, 29 (12) :6419-6424
[6]   ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
BATRA, IP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :558-563
[7]   ELECTRONIC STATES OF IDEAL GE-AL INTERFACES [J].
BATRA, IP ;
HERMAN, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1080-1084
[8]   ELECTRONIC-STRUCTURE CALCULATIONS FOR ATOMIC AND DIATOMIC PHASES OF OXYGEN CHEMISORBED ON AL(111) [J].
BATRA, IP ;
BISI, O .
SURFACE SCIENCE, 1982, 123 (2-3) :283-295
[9]   1ST-PRINCIPLES CALCULATION OF ENERGY OF AN EPITAXIAL SYSTEM [J].
BATRA, IP .
PHYSICAL REVIEW B, 1984, 29 (12) :7108-7110
[10]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
1234567