SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE

被引：84

作者：

KRAITCHMAN, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4323 / +

页数：1

共 18 条

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[5]

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