STRESS-INDUCED GRAIN-BOUNDARY FRACTURES IN AL-SI INTERCONNECTS

[1] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[2] NELSON G, 1984 P INT REL PHYS, P6

[3] ODONNELL SJ, 1984 P INT REL PHYS, P9

[4] OWADA N, 1985, 2ND P INT VLSI MULT, P173

[5] TEMPERATURE-DEPENDENCE OF THE STRESS IN PSG-AL-SI STRUCTURES [J]. THIN SOLID FILMS, 1981, 82 (02) : 143 - 150

[6] SZE SM, 1983, VLSI TECHNOLOGY, P367

[7] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466

[1] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[2] NELSON G, 1984 P INT REL PHYS, P6

[3] ODONNELL SJ, 1984 P INT REL PHYS, P9

[4] OWADA N, 1985, 2ND P INT VLSI MULT, P173

[5] TEMPERATURE-DEPENDENCE OF THE STRESS IN PSG-AL-SI STRUCTURES [J]. THIN SOLID FILMS, 1981, 82 (02) : 143 - 150

[6] SZE SM, 1983, VLSI TECHNOLOGY, P367

[7] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466