LOW-TEMPERATURE OXIDATION OF SILICON STUDIED BY PHOTOSENSITIVE ESR AND AUGER-ELECTRON SPECTROSCOPY

被引：21

作者：

RUZYLLO, J ^{[1
]}

SHIOTA, I ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132758

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：26 / 29

页数：4

共 9 条

[1] SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J].

LEPINE, DJ .

PHYSICAL REVIEW B, 1972, 6 (02) :436-&

[2]

Little L.H., 1966, INFRARED SPECTRA ADS

[3] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON-SPIN RESONANCE .2. [J].

NISHI, Y ;

OHWADA, A ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) :85-&

[4] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1. [J].

NISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) :52-+

[5] ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF SI-SIO2 INTERFACE [J].

REVESZ, AG ;

GOLDSTEIN, B .

SURFACE SCIENCE, 1969, 14 (02) :361-+

[6] INVESTIGATION OF PASSIVATION MECHANISM IN SILICON SURFACES BY ELECTRON-SPIN RESONANCE [J].

SHIOTA, I ;

MIYAMOTO, N ;

NISHIZAWA, J .

SURFACE SCIENCE, 1973, 36 (02) :414-429

[7]

SHIOTA I, 1974, JPN J APPL PHYS, P417

[8]

[No title captured]

[9]

[No title captured]

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