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MINORITY-CARRIER LIFETIME IN POLYCRYSTALLINE SEMICONDUCTORS
被引:2
作者
:
KUMAR, KR
论文数:
0
引用数:
0
h-index:
0
KUMAR, KR
SATYAM, M
论文数:
0
引用数:
0
h-index:
0
SATYAM, M
机构
:
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1983年
/ 77卷
/ 02期
关键词
:
D O I
:
10.1002/pssa.2210770207
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:467 / 470
页数:4
相关论文
共 5 条
[1]
ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
;
YANG, ES
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
YANG, ES
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(04)
:397
-402
[2]
THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:692
-700
[3]
THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON
[J].
GHOSH, AK
论文数:
0
引用数:
0
h-index:
0
GHOSH, AK
;
FISHMAN, C
论文数:
0
引用数:
0
h-index:
0
FISHMAN, C
;
FENG, T
论文数:
0
引用数:
0
h-index:
0
FENG, T
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
:446
-454
[4]
RAMKUMAR K, 1981, APPL PHYS LETT, V39, P898
[5]
GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON
[J].
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
SEAGER, CH
.
JOURNAL OF APPLIED PHYSICS,
1981,
52
(06)
:3960
-3968
←
1
→
共 5 条
[1]
ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
;
YANG, ES
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
YANG, ES
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(04)
:397
-402
[2]
THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:692
-700
[3]
THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON
[J].
GHOSH, AK
论文数:
0
引用数:
0
h-index:
0
GHOSH, AK
;
FISHMAN, C
论文数:
0
引用数:
0
h-index:
0
FISHMAN, C
;
FENG, T
论文数:
0
引用数:
0
h-index:
0
FENG, T
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
:446
-454
[4]
RAMKUMAR K, 1981, APPL PHYS LETT, V39, P898
[5]
GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON
[J].
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
SEAGER, CH
.
JOURNAL OF APPLIED PHYSICS,
1981,
52
(06)
:3960
-3968
←
1
→