A 50-MU-A STANDBY 1MX1/256KX4 CMOS DRAM WITH HIGH-SPEED SENSE AMPLIFIER

被引：7
作者：
FUJII, S
SAITO, S
OKADA, Y
SATO, M
SAWADA, S
SHINOZAKI, S
NATORI, K
OZAWA, O
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 05期
关键词：
D O I：
10.1109/JSSC.1986.1052589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：643 / 648
页数：6
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