A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES

被引:19
作者
CHAO, SS [1 ]
LUCOVSKY, G [1 ]
LIN, SY [1 ]
WONG, CK [1 ]
RICHARD, PD [1 ]
TSU, DV [1 ]
TAKAGI, Y [1 ]
KEEM, JE [1 ]
TYLER, JE [1 ]
PAI, P [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695
关键词
AMORPHOUS SILICON NITRIDE THIN FILMS - AMORPHOUS SILICON OXIDE THIN FILMS - ELECTRONIC STATES - VALENCE BAND STRUCTURE;
D O I
10.1016/0022-3093(85)90813-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(Edited Abstract)
引用
收藏
页码:929 / 932
页数:4
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