A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES

被引：19

作者：

CHAO, SS ^{[1
]}

LUCOVSKY, G ^{[1
]}

LIN, SY ^{[1
]}

WONG, CK ^{[1
]}

RICHARD, PD ^{[1
]}

TSU, DV ^{[1
]}

TAKAGI, Y ^{[1
]}

KEEM, JE ^{[1
]}

TYLER, JE ^{[1
]}

PAI, P ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

AMORPHOUS SILICON NITRIDE THIN FILMS - AMORPHOUS SILICON OXIDE THIN FILMS - ELECTRONIC STATES - VALENCE BAND STRUCTURE;

D O I：

10.1016/0022-3093(85)90813-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：929 / 932

页数：4

共 8 条

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