THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY

被引：71
作者：
KIM, DM [1 ]
KHONDKER, AN [1 ]
AHMED, SS [1 ]
SHAH, RR [1 ]
机构：
[1] TEXAS INSTRUMENTS INC, SEMICOND RES & DEV LAB, TECH STAFF, DALLAS, TX 75265 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期
关键词：
D O I：
10.1109/T-ED.1984.21554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：480 / 493
页数：14
相关论文
共 52 条
[1]  
APPLETON BR, 1982, LASER ELECTRON BEAM
[2]   TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].
BACCARANI, G ;
RICCO, B ;
SPADINI, G .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570
[3]  
BRODSKY MH, 1979, AMORPHOUS SEMICONDUC
[4]   ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J].
CAMPBELL, DR .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :604-606
[5]   GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].
COLINGE, JP ;
DEMOULIN, E ;
DELANNAY, F ;
LOBET, M ;
TEMERSON, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2009-2014
[6]   CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].
Cowher, M.E. ;
Sedgwick, T.O. .
1600, (119)
[7]  
Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703
[8]   DIODE CHARACTERISTICS IN LASER-RECRYSTALLIZED AND CONVENTIONAL POLYCRYSTALLINE SILICON [J].
EGGERMONT, GEJ ;
DEGROOT, JG .
ELECTRON DEVICE LETTERS, 1982, 3 (06) :156-158
[9]   ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
HIROSE, M ;
TANIGUCHI, M ;
OSAKA, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :377-382
[10]  
HO PS, 1982, THIN FILMS INTERFACE
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