PLASMA-ENHANCED DEPOSITION OF HIGH-QUALITY EPITAXIAL SILICON AT LOW-TEMPERATURES

被引：12
作者：
COMFORT, JH
REIF, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期
关键词：
D O I：
10.1063/1.98278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2016 / 2018
页数：3
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