USE OF A PHASE-DIAGRAM AS A GUIDE FOR GROWTH OF PBTE FILMS

被引：32

作者：

LOPEZOTERO, A ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,LEHRKANZEL EXPTL PHYS 2,LINZ,AUSTRIA

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 08期

关键词：

D O I：

10.1063/1.88214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：470 / 472

页数：3

共 8 条

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FUJIMOTO, M ;

SATO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) :128-&

[2] EPITAXIAL PBSE AND PB1-CHI SN CHI SE - GROWTH AND ELECTRICAL PROPERTIES [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :892-897

[3] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J].

HOHNKE, DK ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :633-635

[4] INJECTION LUMINESCENCE AND LASER ACTION IN EPITAXIAL PBTE DIODES [J].

HOLLOWAY, H ;

YEUNG, KF ;

VARGA, AJ ;

WEBER, WH ;

LOGOTHETIS, EM .

APPLIED PHYSICS LETTERS, 1972, 21 (01) :5-+

[5] HIGH MOBILITY AS-GROWN PBTE FILMS PREPARED BY HOT WALL TECHNIQUE [J].

LOPEZOTERO, A ;

HAAS, LD .

THIN SOLID FILMS, 1974, 23 (01) :1-6

[6] PRECIPITATION OF TE AND PB IN PBTE CRYSTALS [J].

SCANLON, WW .

PHYSICAL REVIEW, 1962, 126 (02) :509-&

[7] SINGLE-HETEROSTRUCTURE PBS(1-X)SEX DIODE LASERS [J].

SLEGER, KJ ;

MCLANE, GF ;

STROM, U ;

BISHOP, SG ;

MITCHELL, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :5069-5071

[8] SINGLE HETEROJUNCTION PB1- SN TE DIODE LASERS [J].

WALPOLE, JN ;

CALAWA, AR ;

RALSTON, RW ;

HARMAN, TC ;

MCVITTIE, JP .

APPLIED PHYSICS LETTERS, 1973, 23 (11) :620-622

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