BORON AND PHOSPHORUS DIFFUSION THROUGH AN SIO2 LAYER FROM A DOPED POLYCRYSTALLINE SI SOURCE UNDER VARIOUS DRIVE-IN AMBIENTS

被引：44

作者：

SHIMAKURA, K ^{[1
]}

SUZUKI, T ^{[1
]}

YADOIWA, Y ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, IC DIV, 1753 SHIMONUMABE, KAWASAKI, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90117-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：991 / 997

页数：7

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