SI LSI PROCESS TECHNOLOGY FOR INTEGRATING FERROELECTRIC CAPACITORS

被引：20

作者：

ARITA, K ^{[1
]}

FUJII, E ^{[1
]}

SHIMADA, Y ^{[1
]}

UEMOTO, Y ^{[1
]}

NASU, T ^{[1
]}

INOUE, A ^{[1
]}

MATSUDA, A ^{[1
]}

OTSUKI, T ^{[1
]}

SUZUOKA, N ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DIV MICROCOMP,KYOTO 617,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

FERROELECTRIC; FABRICATION PROCEDURE; METALORGANIC DEPOSITION; BA1-XSRXTIO3 LEAKAGE CURRENT; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

D O I：

10.1143/JJAP.33.5397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication procedure of ferroelectric thin film capacitors onto conventional Si LSIs is investigated. Electrical characteristics of the integrated Ba1-xSrxTiO3 (BST) capacitors and the metal-oxide-semiconductor transistors embedded in the Si substrate are examined. Results of these measurements suggest the usefulness of this integration process for the fabrication of ferroelectric thin film devices, which is substantiated by the evaluation of an analog/digital IC with the integrated BST bypass capacitor.

引用

页码：5397 / 5399

页数：3

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