METALLURGICAL MODES OF FAILURE IN THE SI/TIN/AL METALLIZATION STRUCTURE

被引：2

作者：

HYATT, SO

CHAO, BS

YAMAUCHI, H

机构：

[1] ENERGY CONVERS DEVICES INC,ANALYT & STRUCT LAB,TROY,MI 48084

[2] INT SUPERCONDUCT TECHNOL CTR,DIV CERAM,SUPERCONDUCT RES LAB,KOTO KU,TOKYO 135,JAPAN

来源：

VACUUM | 1993年 / 44卷 / 10期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0042-207X(93)90291-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reactively sputtered titanium nitride diffusion barrier films were prepared with an increasing nitrogen content in argon, the working gas. This process affected the microstructure and stoichiometry of the films. The metallurgical modes of failure in the Si/TiN/Al metallization structure were characterized by annealing temperatures ranging from 300 to 600-degrees-C for 30 min. The TiN films performed their barrier function in temperatures up to 567-degrees-C. However, in the temperature range 400-567-degrees-C, residual and thermal stresses caused the top Al film to crack. At 600-degrees-C, Auger depth profiling indicated that a diffusion of both Al and Si occurred through the TiN film. Lesser contributions to the barrier failure were attributed to stoichiometry and the structural distortion for the annealing routines.

引用

页码：1025 / 1029

页数：5

共 20 条

[1]

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