DEFECT CHARACTERIZATION IN DIAMONDS BY MEANS OF POSITRON-ANNIHILATION

被引：43

作者：

DANNEFAER, S ^{[1
]}

MASCHER, P ^{[1
]}

KERR, D ^{[1
]}

机构：

[1] UNIV WINNIPEG, DEPT PHYS, WINNIPEG R3B 2E9, MANITOBA, CANADA

来源：

关键词：

D O I：

10.1016/0925-9635(92)90138-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron lifetime measurements on type Ia diamonds have shown that divacancies and larger vacancy clusters (>10 vacancies) have been retained in these stones. Upon irradiation with 3.5 MeV electrons, monovacancies are formed in their neutral state of charge. Some divacancies are also formed. The monovacancies are introduced at a rate of 0.3 cm-1 and no charge transfer involving monovacancies was found at thermal equilibrium up to temperatures of 800 K. © 1992.

引用

页码：407 / 410

页数：4

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