10 GBIT/S MQW-DFB-SIBH LASERS ENTIRELY GROWN BY LPMOVPE

The successful realisation of MQW DFB-SIBH lasers for 10 Gbit/s systems applications is reported. The SIBH laser structure is completely based on an LPMOVPE growth process, including selective LPMOVPE of semi-insulating current blocking layers. Threshold currents as low as 7 mA and total chip capacitances of 2.6 pF are measured resulting in 6 dB(el) (dB(el) = electrical dB) corner frequencies in excess of 11 GHz and rise/fall times of 36/44 ps, respectively. A significant reduction of the linewidth broadening compared to bulk lasers is observed which is attributed to a reduced alpha factor due to quantum wells. A chirp at -20 dB of 0.47 nm under 10 Gbit/s modulation is obtained.