AN ANALYTICAL ONE-DIMENSIONAL MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES

被引：20

作者：

LAI, FSJ ^{[1
]}

SUN, JYC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2803 / 2811

页数：9

共 13 条

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].

ELMANSY, YA ;

BOOTHROYD, AR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262

[3]

Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[4]

LAI FS, UNPUB SOLID STATE EL

[5]

LAI FS, UNPUB DESIGN CHARACT

[6]

LAI FS, 1984, 166TH EL SOC M NEW O

[7]

MULLER RS, 1977, DEVICE ELECTRONICS I

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[9] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J].

SCOTT, DB ;

HUNTER, WR ;

SCHICHIJO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :651-661

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 2 →