(INAS)3(GAAS)1 SUPERLATTICE CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：11
作者：
NISHIYAMA, N
YANO, H
NAKAJIMA, S
HAYASHI, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 09期
关键词：
D O I：
10.1063/1.101618
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：894 / 895
页数：2
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