TOPOGRAPHY OF THE SI(111) SURFACE DURING SILICON MOLECULAR-BEAM EPITAXY

被引：67
作者：
TUNG, RT
SCHREY, F
机构：
来源：
PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.63.1277
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1277 / 1280
页数：4
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