A DUAL-STRIPE PHASE-LOCKED DIODE-LASER

被引：4

作者：

OHSAWA, J

IKEDA, K

TAKAHASHI, K

SUSAKI, W

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 04期

关键词：

D O I：

10.1143/JJAP.22.L230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L230 / L232

页数：3

共 9 条

[1] HIGH-POWER LEAKY-MODE MULTIPLE-STRIPE LASER [J].

ACKLEY, DE ;

ENGELMANN, RWH .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :27-29

[2] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[3]

LOOCKWOOD HF, 1970, APPL PHYS LETT, V17, P499

[4] EXPERIMENTAL AND ANALYTIC STUDIES OF COUPLED MULTIPLE STRIPE DIODE-LASERS [J].

SCIFRES, DR ;

STREIFER, W ;

BURNHAM, RD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) :917-922

[5] HIGH-POWER COUPLED-MULTIPLE-STRIPE PHASE-LOCKED INJECTION-LASER [J].

SCIFRES, DR ;

STREIFER, W ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :259-261

[6] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

[7] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS [J].

TSANG, WT ;

LOGAN, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) :451-469

[8] (ALGA)AS STRIP BURIED-HETEROSTRUCTURE LASERS PREPARED BY HYBRID CRYSTAL-GROWTH [J].

TSANG, WT ;

LOGAN, RA .

ELECTRONICS LETTERS, 1982, 18 (10) :397-398

[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

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