OPTICAL COMPARATOR - A NEW APPLICATION FOR AVALANCHE PHOTOTRANSISTORS

[1] ASBECK PM, 1982, P DEV RES C FT COLLI

[2] HIGH-SENSITIVITY INP-INGAAS HETEROJUNCTION PHOTO-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (18) : 713 - 714

[3] SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 820 - 821

[4] CHARACTERISTICS OF AN AVALANCHE PHOTO-TRANSISTOR FABRICATED ON A SI SURFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 161 - 163

[5] DRISCOLL FF, 1975, SOLID STATE DEVICES, P297

[6] HAMILTON DJ, 1962, ELECTRON ENG, V34, P808

[7] HAMILTON DJ, 1960, T I RADIO ENG EC, V9, P456

[8] ALLOYED JUNCTION AVALANCHE TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (05): : 883 - 902

[9] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[10] SUBNANOSECOND-PULSE GENERATOR WITH VARIABLE PULSEWIDTH USING AVALANCHE TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (01) : 21 - 23

[1] ASBECK PM, 1982, P DEV RES C FT COLLI

[2] HIGH-SENSITIVITY INP-INGAAS HETEROJUNCTION PHOTO-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (18) : 713 - 714

[3] SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 820 - 821

[4] CHARACTERISTICS OF AN AVALANCHE PHOTO-TRANSISTOR FABRICATED ON A SI SURFACE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 161 - 163

[5] DRISCOLL FF, 1975, SOLID STATE DEVICES, P297

[6] HAMILTON DJ, 1962, ELECTRON ENG, V34, P808

[7] HAMILTON DJ, 1960, T I RADIO ENG EC, V9, P456

[8] ALLOYED JUNCTION AVALANCHE TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (05): : 883 - 902

[9] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[10] SUBNANOSECOND-PULSE GENERATOR WITH VARIABLE PULSEWIDTH USING AVALANCHE TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (01) : 21 - 23