DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS

被引：92

作者：

HUTCHINSON, PW

DOBSON, PS

OHARA, S

NEWMAN, DH

机构：

[1] UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,POB 363,BIRMINGHAM B15 2TT,ENGLAND

[2] PO RES CTR,MARTLESHAM HEATH,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 05期

关键词：

D O I：

10.1063/1.88139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：250 / 252

页数：3

共 8 条

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[2] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

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[4] ON INTERSTITIAL DISLOCATION LOOPS IN ALUMINIUM BOMBARDED WITH ALPHA-PARTICLES [J].

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[5] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES [J].

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HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :226-228

[6] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[7]

PETROFF P, 1973, APPL PHYS L, V23, P409

[8] DEGRADATION MECHANISM OF (AL.GA) AS DOUBLE-HETEROSTRUCTURE LASER-DIODES [J].

YONEZU, H ;

SAKUMA, I ;

KAMEJIMA, T ;

UENO, M ;

NISHIDA, K ;

NANNICHI, Y ;

HAYASHI, I .

APPLIED PHYSICS LETTERS, 1974, 24 (01) :18-19

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