ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM

被引：98

作者：

TABE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1143/JJAP.21.534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：534 / 538

页数：5

共 9 条

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[6]

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