Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy

The effects of reactor pressure on epitaxial lateral overgrowth (ELO) via low-pressure metalorganic vapor phase epitaxy (MOVPE) have been studied in relation to growth temperature. For the ELO GaN on SiO2 stripes along the [<1(1)over bar>00] direction of the underlying GaN, on decreasing the reactor pressures from 500 to 40 Torr or increasing the growth temperatures from 950 to 1050 degrees C. the (0001) surfaces become broad and the side walls changed from inclined {11(2) over bar 1} surfaces to vertical {11(2) over bar 0} surfaces. For the ELO GaN on the stripes along the [11(2) over bar 0] direction, the shapes with {<1(1)over bar>01} facets are independent of the reactor pressure and growth temperature. The ELO of GaN is dominated by the diffusion-limited process.