LONG RADIATIVE LIFETIMES OF BIEXCITONS IN GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：34
作者：
CITRIN, DS
机构：
[1] Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109-2099
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.50.17655
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dynamics of biexciton radiative decay in semiconductor quantum wells is treated within the excitonic-molecule mode including super-radiance, exciton recoil, and nonzero photon momentum. For parameters describing GaAs/AlxGa1-xAs quantum wells, we find that the rate for the decay of the excitonic molecule (in the ground state of the relative motion between excitons) into an exciton and a photon is less than the decay rate characteristic of radiative free one-excitons. © 1994 The American Physical Society.
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页码：17655 / 17658
页数：4
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