THERMOOPTIC MODULATION AT 1.5 MU-M IN SILICON ETALON

被引：237

作者：

COCORULLO, G

RENDINA, I

机构：

[1] IRECE-CNR, Istituto Ricerche Elettromagnetismo e Componenti Elettronici, Consiglio Nazionale delle Richerche, 80124 Napoli

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

OPTICAL MODULATION; OPTOELECTRONICS;

D O I：

10.1049/el:19920051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results on thermo-optical induced modulation in a silicon etalon at 1.5-mu-m are reported. The measurements have also allowed an accurate determination of the thermo-optic effect in silicon at this wavelength.

引用

页码：83 / 85

页数：3

共 6 条

[1] NEW POSSIBILITIES FOR EFFICIENT SILICON INTEGRATED ELECTROOPTICAL MODULATORS
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RENDINA, I
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[J]. OPTICS COMMUNICATIONS, 1991, 86 (02) : 228 - 235
[2] NAZAROVA NA, 1988, SOV J OPT TECHNOL+, V55, P220
[3] Solimeno S., 1986, GUIDING DIFFRACTION, P522
[4] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M.
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[J]. IEEE Journal of Quantum Electronics, 1986, QE-22 (06) : 873 - 879
[5] SILICON MACH-ZEHNDER WAVE-GUIDE INTERFEROMETERS OPERATING AT 1.3 MU-M
TREYZ, GV
[J]. ELECTRONICS LETTERS, 1991, 27 (02) : 118 - 120
[6] 1988, OPTICAL PROPERTIES S

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