GAAS/ALGAAS QUANTUM-WELLS AND DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY

被引：11

作者：

TSANG, WT ^{[1
]}

MILLER, RC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90282-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：55 / 65

页数：11

共 50 条

[41] EXTREMELY FLAT INTERFACES IN GAAS/ALGAAS QUANTUM-WELLS WITH HIGH AL CONTENT (0.7) GROWN ON GAAS (411)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY
SHIMOMURA, S
KANEKO, S
MOTOKAWA, T
SHINOHARA, K
ADACHI, A
OKAMOTO, Y
SANO, N
MURASE, K
HIYAMIZU, S
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 409 - 414
[42] Extremely flat interfaces in GaAs/AlGaAs quantum wells grown on GaAs(411)A substrates by molecular beam epitaxy
Shimomura, Satoshi, 1728, Publ by JJAP, Minato-ku, Japan (32):
[43] GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS
HAYAKAWA, T
TAKAHASHI, K
HOSODA, M
YAMAMOTO, S
HIJIKATA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1553 - L1555
[44] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE
WINDHORN, TH
METZE, GM
TSAUR, BY
FAN, JCC
APPLIED PHYSICS LETTERS, 1984, 45 (04) : 309 - 311
[45] GAAS-A1XGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 741 - 741
[46] THERMAL DIAGNOSIS OF DARK LINES IN DEGRADED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS
KOBAYASHI, T
KAWAKAMI, T
FURUKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 508 - 515
[47] GRADUAL DEGRADATION OF GAAS DOUBLE-HETEROSTRUCTURE LASERS
NEWMAN, DH
RITCHIE, S
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 300 - 305
[48] DOUBLE-HETEROSTRUCTURE GAAS - SI DIODE LASERS
ROSSI, JA
HSIEH, JJ
APPLIED PHYSICS LETTERS, 1972, 21 (06) : 287 - &
[49] MAGNETOOPTICAL TRANSITIONS IN GAAS-ALGAAS COUPLED DOUBLE QUANTUM-WELLS
PERRY, CH
LEE, KS
MA, L
KOTELES, ES
ELMAN, BS
BROIDO, DA
JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4920 - 4922
[50] Self-aligned AlGaAs/GaAs double heterostructure lasers grown by organometallic vapor phase epitaxy (OMVPE)
Lee, B.J.
Chen, C.Y.
Hsu, C.C.
Chang, C.M.
MRL bulletin of research and development, 1988, 2 (02): : 5 - 8

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