CHARACTERIZATION OF SIO2-SUPPORTED MO(VI) - THE EFFECT OF CALCINATION AND EXPOSURE TO WATER-VAPOR

被引:58
作者
STENCEL, JM
DIEHL, JR
DESTE, JR
MAKOVSKY, LE
RODRIGO, L
MARCINKOWSKA, K
ADNOT, A
ROBERGE, PC
KALIAGUINE, S
机构
[1] PITTSBURGH ENERGY TECHNOL CTR,PITTSBURGH,PA 15236
[2] UNIV LAVAL,DEPT CHEM,QUEBEC CITY G1K 7P4,QUEBEC,CANADA
[3] UNIV LAVAL,DEPT CHEM ENGN,QUEBEC CITY G1K 7P4,QUEBEC,CANADA
[4] UNIV LAVAL,GRAPS,QUEBEC CITY G1K 7P4,QUEBEC,CANADA
关键词
D O I
10.1021/j100411a006
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:4739 / 4743
页数:5
相关论文
共 23 条
  • [1] QUANTITATIVE RAMAN SPECTROMETRIC DETERMINATION OF MOLYBDENUM TRIOXIDE AND TUNGSTEN TRIOXIDE IN SUPPORTED CATALYSTS
    BALTRUS, JP
    MAKOVSKY, LE
    STENCEL, JM
    HERCULES, DM
    [J]. ANALYTICAL CHEMISTRY, 1985, 57 (13) : 2500 - 2503
  • [2] STRUCTURE AND CATALYTIC ACTIVITY OF MOO3.SIO2 SYSTEMS .1. SOLID-STATE PROPERTIES
    CASTELLAN, A
    BART, JCJ
    VAGHI, A
    GIORDANO, N
    [J]. JOURNAL OF CATALYSIS, 1976, 42 (01) : 162 - 172
  • [3] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS
    CHANG, CC
    [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21
  • [4] SURFACE CHARACTERIZATION OF SILICA-ALUMINAS BY PHOTOELECTRON-SPECTROSCOPY
    DEFOSSE, C
    CANESSON, P
    ROUXHET, PG
    DELMON, B
    [J]. JOURNAL OF CATALYSIS, 1978, 51 (02) : 269 - 277
  • [5] PHYSICOCHEMICAL CHARACTERIZATION OF THE INTERACTION BETWEEN COBALT MOLYBDENUM OXIDE AND SILICON DIOXIDE .1. INFLUENCE OF THE COBALT-MOLYBDENUM RATIO
    GAJARDO, P
    GRANGE, P
    DELMON, B
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1979, 83 (13) : 1771 - 1779
  • [6] PHYSICOCHEMICAL CHARACTERIZATION OF THE INTERACTION BETWEEN COBALT MOLYBDENUM OXIDE AND SILICON DIOXIDE .2. INFLUENCE OF THE AMOUNT OF OXIDE PHASE
    GAJARDO, P
    PIROTTE, D
    GRANGE, P
    DELMON, B
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1979, 83 (13) : 1780 - 1786
  • [7] RAMAN-SPECTROSCOPIC INVESTIGATION OF HETEROPOLYMOLYBDATE SPECIES IN AQUEOUS-SOLUTION
    KASPRZAK, MS
    CROUCH, SR
    LEROI, GE
    [J]. APPLIED SPECTROSCOPY, 1978, 32 (06) : 537 - 540
  • [9] KERKHOF FPJM, 1979, J PHYS CHEM-US, V83, P1612, DOI 10.1021/j100475a011
  • [10] ELECTRON ESCAPE DEPTH IN SILICON
    KLASSON, M
    BERNDTSSON, A
    HEDMAN, J
    NILSSON, R
    NYHOLM, R
    NORDLING, C
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) : 427 - 434